1 2 4.597 3.988 5.283 4.775 2.896 2.489 1.575 1.397 3.93 3.73 2.38 2.18 5.49 5.29 1.47 1.67 1.524 0.762 0.203 0.051 0.305 0.152 recommended land pattern do-214ac(sma) unit: mm 1.981 2.438 features for surface mounted applications. low profile package. built-in strain relief. metal silicon junction, maj ority carrier conduction. low power loss, high efficiency. high current capability, low forward voltage drop. high surge capability. absolute maximum ratings and electrical characteristics at 25 parameter symbol kcd32 KCD34 kcd36 kcd310 unit maximum repetitive peak reverse voltage v rrm 20 40 60 100 v maximum rms voltage v rms 14 28 42 70 v maximum dc blocking voltage v dc 20 40 60 100 v maximum average forward rectified current i (av) a peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm a maximum instantaneous forward voltage at 3.0a * 1 v f 0.7 0.85 v typical thermal resistance r ja r jl /w operating junction temperature range t j storage temperature range t stg * 1. pulse test: 300ms pulse width, 1% duty cycle. 3 80 0.5 -55to+150 maximum dc reverse current * 1 t a =25 at rated dc blocking voltage t a =100 i r 0.5 20 10 -55to+125 -55to+150 ma 55 17 kcd32 thru kcd310 (scd32 thru scd310) sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
|
